45-W RF Power GaN HEMT

Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 12 dB Small Signal Gain at 4.0 GHz 55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation • Up to 4 GHz Operation\n•16 dB Small Signal Gain at 2.0 GHz\n•12 dB Small Signal Gain at 4.0 GHz\n•55 W Typical PSAT\n•55% Efficiency at PSAT\n•28 V Operation;

MACOM

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGH40045F DEV BOARD WITH HEMT

WOLFSPEED

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD DEMO AMP CIRCUIT CGH40045

WOLFSPEED

Package：440206；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：45W, GAN HEMT, 28V, DC-4.0GHZ, P

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