35 W, RF Power GaN HEMT

文件：1.3757 Mbytes 页数：14 Pages

Cree

科锐

35 W, RF Power GaN HEMT

文件：1.3757 Mbytes 页数：14 Pages

Cree

科锐

35 W, RF Power GaN HEMT

文件：1.3757 Mbytes 页数：14 Pages

Cree

科锐

35-W RF Power GaN HEMT

Up to 4 GHz Operation 15 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.0 GHz 45 W typical PSAT 60 % Efficiency at PSAT 28 V Operation • Up to 4 GHz Operation\n•15 dB Small Signal Gain at 2.0 GHz\n•13 dB Small Signal Gain at 4.0 GHz\n•45 W typical PSAT\n•60 % Efficiency at PSAT\n•28 V Operation;

MACOM

Package：440193；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 28V 440193

WOLFSPEED

35-W RF Power GaN HEMT

Up to 4 GHz Operation 15 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.0 GHz 45 W typical PSAT 60 % Efficiency at PSAT 28 V Operation • Up to 4 GHz Operation\n•15 dB Small Signal Gain at 2.0 GHz\n•13 dB Small Signal Gain at 4.0 GHz\n•45 W typical PSAT\n•60 % Efficiency at PSAT\n•28 V Operation;

MACOM

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGH40035F DEV BOARD WITH HEMT

WOLFSPEED