35-W RF Power GaN HEMT

Up to 4 GHz Operation 15 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.0 GHz 45 W typical PSAT 60 % Efficiency at PSAT 28 V Operation • Up to 4 GHz Operation\n•15 dB Small Signal Gain at 2.0 GHz\n•13 dB Small Signal Gain at 4.0 GHz\n•45 W typical PSAT\n•60 % Efficiency at PSAT\n•28 V Operation;

MACOM

35 W, RF Power GaN HEMT

文件：1.3757 Mbytes 页数：14 Pages

Cree

科锐

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGH40035F DEV BOARD WITH HEMT

WOLFSPEED

35 W, RF Power GaN HEMT

文件：1.3757 Mbytes 页数：14 Pages

Cree

科锐

SCHOTTKY POWERMOD

● Schottky Barrier Rectifier ● Guard Ring Protection ● 400 Amperes/ 30 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

文件：163.59 Kbytes 页数：2 Pages

Microsemi

美高森美

Schottky PowerMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● 400 Amperes/ 30 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

文件：149.69 Kbytes 页数：2 Pages

Microsemi

美高森美