240 W, 3.1-3.5 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Description Wolfspeed’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5 GHz S-Band radar amplifier applications. The transistor is s

文件：1.8417 Mbytes 页数：12 Pages

WOLFSPEED

240 W; 3100 - 3500 MHz; 50 - ohm Input/Output - Matched; GaN HEMT for S - Band Radar Systems

The CGH35240 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35240 ideal for 3.1 - 3.5-GHz; S-band; radar-amplifier applications. The transistor is supplied in a ceramic/meta ·3.1 – 3.5 GHz Operation\n·240 W Typical Output Power\n·11.6 dB Power Gain at PIN = 42.0 dBm\n·57% Typical Power Added Efficiency\n·50 Ohm Internally Matched\n·<0.2 dB Pulsed Amplitude Droop;

MACOM

240 W, 3100-3500 MHz, 50-ohm Input/

文件：1.55762 Mbytes 页数：12 Pages

CREE

科锐

240 W, 3100-3500 MHz, 50-ohm Input/

文件：1.55762 Mbytes 页数：12 Pages

CREE

科锐

240 W, 3100-3500 MHz, 50-ohm Input/

文件：1.55762 Mbytes 页数：12 Pages

CREE

科锐

240-W; 3100 – 3500-MHz; 50-ohm Input/Output-Matched; GaN HEMT for S-Band Radar Systems

3.1 – 3.5 GHz Operation 240 W Typical Output Power 11.6 dB Power Gain at PIN = 42.0 dBm 57% Typical Power Added Efficiency 50 Ohm Internally Matched <0.2 dB Pulsed Amplitude Droop • 3.1 – 3.5 GHz Operation\n•240 W Typical Output Power\n•11.6 dB Power Gain at PIN = 42.0 dBm\n•57% Typical Power Added Efficiency\n•50 Ohm Internally Matched\n•<0.2 dB Pulsed Amplitude Droop;

MACOM