60 W, 3100-3500 MHz, 28V, GaN HEMT

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60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access

文件：2.81404 Mbytes 页数：12 Pages

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60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX

The CGH35060P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35060P1 ideal for 3.3 - 3.6-GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/me ·3.3 – 3.6 GHz Operation\n·60 W Peak Power Capability\n·12 dB Small Signal Gain\n·8.0 W PAVE at < 2.0% EVM\n·25% Drain Efficiency at 8 W PAVE;

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