8-W (average), 28-V, GaN HEMT for linear communications ranging from VHF to 3 GHz

Wolfspeed’s CGH27060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3 – 2.9-GHz WiMAX and BWA amplifier applications. The unmatch

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60 W Peak, 28 V, GaN HEMT for Linear Communications from VHF to 3 GHz

Description Wolfspeed’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applicatio

文件：4.55953 Mbytes 页数：12 Pages

WOLFSPEED

60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

文件：824.02 Kbytes 页数：8 Pages

CREE

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60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz

文件：1.63141 Mbytes 页数：12 Pages

CREE

科锐

60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz

文件：1.63141 Mbytes 页数：12 Pages

CREE

科锐

60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz

文件：1.63141 Mbytes 页数：12 Pages

CREE

科锐

8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz

Note: CGH27060F is Not Recommended for New Designs. Refer to CG2H40045F. The CGH27060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27060F ideal for VHF; Comms; 3G; 4G; LTE ·VHF – 3.0 GHz Operation\n·14 dB Small Signal Gain\n·8.0 W PAVE at < 2.0% EVM\n·27% Drain Efficiency at 8 W Average Power;

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Package：440193；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 28V 440193

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