首页 >CG6637AA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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-30VP-ChannelMOSFET Applications ·Inverter ·PowerSupplies Features ·RDS(ON)=11.6mW(VGS=-10V) ·RDS(ON)=18mW(VGS=-4.5V) ·Highperformancetrenchtechnologyforextremely lowRDS(ON) ·RoHSCompliant ·VDSS=-30V | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
P-channelEnhancementModePowerMOSFET Features VDS=-30V,ID=-60A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
-30VP-ChannelMOSFET Features RDS(ON)=11.6mW(VGS=-10V) RDS(ON)=18mW(VGS=-4.5V) Highperformancetrenchtechnologyforextremely lowRDS(ON) RoHSCompliant VDSS=-30V | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
P-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
35VP-ChannelPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
35VP-ChannelPowerTrench-RMOSFET GeneralDescription ThisP-ChannelMOSFEThasbeenproducedusingFairchildSemiconductor’sproprietaryPowerTrenchtechnologytodeliverlowRdsonandoptimizedBvdsscapabilitytooffersuperiorperformancebenefitintheapplications. Features ·–55A,–35VRDS(ON)=11.6mW@VGS= | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DirectFETPowerMOSFET Description TheIRF6637combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | IRF | ||
LowConductionLossesandSwitchingLosses | IRF International Rectifier | IRF | ||
DirectFETPowerMOSFET Description TheIRF6637PbFcombinesthelatestHEXFET®powerMOSFETsilicontechnologywithadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeom | IRF International Rectifier | IRF | ||
DirectFETPowerMOSFET Description TheIRF6637PbFcombinesthelatestHEXFET®powerMOSFETsilicontechnologywithadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeom | IRF International Rectifier | IRF |
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