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CG2H80120D-GP4中文资料120 W; DC - 8000 MHz; 28 V; GaN HEMT Die数据手册MACOM规格书

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厂商型号

CG2H80120D-GP4

参数属性

CG2H80120D-GP4 封装/外壳为模具;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为分立半导体产品的晶体管-FETMOSFET-射频;产品描述:120W GAN HEMT 28V 8.0GHZ DIE, G2

功能描述

120 W; DC - 8000 MHz; 28 V; GaN HEMT Die

封装外壳

模具

制造商

MACOM Tyco Electronics

数据手册

下载地址下载地址二

更新时间

2025-9-22 23:01:00

人工找货

CG2H80120D-GP4价格和库存,欢迎联系客服免费人工找货

CG2H80120D-GP4规格书详情

描述 Description

The CG2H80120D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

特性 Features

·28 V Operation
·120 W Typical PSAT
·High Breakdown Voltage
·High Temperature Operation
·Up to 8 GHz Operation
·High Efficiency

应用 Application

·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

技术参数

  • 制造商编号

    :CG2H80120D-GP4

  • 生产厂家

    :MACOM

  • Min Frequency(MHz)

    :0

  • Max Frequency(MHz)

    :8000

  • Peak Output Power(W)

    :120

  • Gain(dB)

    :12.0

  • Efficiency(%)

    :65

  • Operating Voltage(V)

    :28

  • Form

    :Discrete Bare Die

  • Package Category

    :Die

  • Technology

    :GaN-on-SiC

供应商 型号 品牌 批号 封装 库存 备注 价格
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30296
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