45 W, 8.0 GHz, GaN HEMT Die

Description Wolfspeed’s CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs

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WOLFSPEED

General-Purpose Broadband, 28 V

Cree’s CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power den

MACOM

45 W, 8.0 GHz, GaN HEMT Die

The CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power densit ·28 V Operation\n·45 W Typical PSAT\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 8 GHz Operation\n·High Efficiency;

MACOM

Package：模具；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：45W, GAN HEMT, 28V, DC-8.0GHZ, B

WOLFSPEED