45 W, 8.0 GHz, GaN HEMT Die

The CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power densit ·28 V Operation\n·45 W Typical PSAT\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 8 GHz Operation\n·High Efficiency;

MACOM

Package：模具；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：45W, GAN HEMT, 28V, DC-8.0GHZ, B

WOLFSPEED

QFP

COPPERGAT

上传：深圳台格电子科技有限公司

QFN

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

上传：深圳市富芯乐电子科技有限公司

SOP8

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

上传：深圳市富芯乐电子科技有限公司