首页>CG2H40120>规格书详情

CG2H40120数据手册开发板套件编程器的射频评估开发套件开发板规格书PDF

PDF无图
厂商型号

CG2H40120

参数属性

CG2H40120 包装为盒;类别为开发板套件编程器的射频评估开发套件开发板;产品描述:CG2H40120F DEV BOARD WITH HEMT

功能描述

120 W; RF Power GaN HEMT

制造商

MACOM Tyco Electronics

中文名称

玛科姆技术方案控股有限公司

原厂标识
数据手册

下载地址下载地址二

更新时间

2025-8-6 10:19:00

人工找货

CG2H40120价格和库存,欢迎联系客服免费人工找货

CG2H40120规格书详情

描述 Description

The CG2H40120 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40120; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CG2H40120 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

特性 Features

·20 dB Small Signal Gain at 1.0 GHz
·15 dB Small Signal Gain at 2.0 GHz
·130 W Typical PSAT
·70% Efficiency at PSAT
·28 V Operation

应用 Application

·Test Instrumentation
·Broadband Amplifiers
·2-Way Private Radio

技术参数

  • 制造商编号

    :CG2H40120

  • 生产厂家

    :MACOM

  • Min Frequency(MHz)

    :0

  • Max Frequency(MHz)

    :2500

  • Peak Output Power(W)

    :130

  • Gain(dB)

    :20.0

  • Efficiency(%)

    :70

  • Operating Voltage(V)

    :28

  • Form

    :Packaged Discrete Transistor

  • Package Category

    :Flange

  • Technology

    :GaN-on-SiC

供应商 型号 品牌 批号 封装 库存 备注 价格
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
询价
Cree
22+
NA
180
加我QQ或微信咨询更多详细信息,
询价
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
询价
M/A-COM
22+
NA
12800
只做原装,价格优惠,长期供货。
询价
COPPERGATE
24+
65200
询价
Cree/Wolfspeed
100
询价
CREE
25+
500
原厂原装,价格优势
询价
MITSUBIS
23+
3880
正品原装货价格低
询价
10
优势库存,全新原装
询价
Schurter
2022+
1
全新原装 货期两周
询价