单路P沟道MOS管

This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power\n\nmanagement and other battery powered circuits, and low in-line power dissipati

CHIPFLY

芯飞卓

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 2.3 Ampere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION *

文件：307.26 Kbytes 页数：3 Pages

CHENMKO

力勤

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 2.3 Ampere FEATURE ​​​​​​​* Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICAT

文件：654.48 Kbytes 页数：3 Pages

CHENMKO

力勤

P-Channel Enhancement Mode MOSFET

文件：390.99 Kbytes 页数：6 Pages

ZPSEMIZP Semiconductor

至尚臻品