CEWP140N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,150A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-3Ppackage. RoHScompliant.

FIR140N10ANFG

N-ChannelEnhancementModePowerMosfet

FIR140N10PG

N-ChannelEnhancementModePowerMosfet

FIR140N10RG

N-ChannelEnhancementModePowerMosfet

FQA140N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=140A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.01Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FQA140N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQH140N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=140A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.01Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQH140N10

100VN-ChannelMOSFET

IXFH140N10P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=140A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V DESCRIPTION ·ACMotorDrives ·DC-DCConverters ·BatteryChargers ·Switch-ModeandResonant-ModePowerSupplies

IXFH140N10P

PolarHVHiPerFETPowerMOSFETs