N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 78A, RDS(ON) = 6.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 9.0mW @VGS = 4.5V.

文件：647.37 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

VOLTAGE REFERENCE ARRAY

文件：94.03 Kbytes 页数：5 Pages

DIODES

美台半导体

VOLTAGE REFERENCE ARRAY

文件：91.52 Kbytes 页数：5 Pages

DIODES

美台半导体

Single N-Channel MOSFET

Features  Advanced Trench MOS Technology  Low Gate Charge  Low RDS(ON)  100 EAS Guaranteed  Green Device Available Applications  Motor Control.  DC/DC Converter.  Synchronous rectifier applications.

文件：663.14 Kbytes 页数：4 Pages

FETEK

台湾东沅