N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 10.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V.

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CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 40A, RDS(ON) = 10.2 mW @VGS = 10V. RDS(ON) = 16 mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：744.59 Kbytes 页数：6 Pages

CET-MOS

华瑞

LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low noise applications.

文件：109.37 Kbytes 页数：2 Pages

Central

SURFACE MOUNT LOW NOISE SILICON ZENER DIODES 6.8 VOLTS THRU 47 VOLTS 500mW, 5 TOLERANCE

文件：307.74 Kbytes 页数：2 Pages

Central