N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 800V, 2.5A, RDS(ON) = 4.8Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：421.44 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V, 2.5A, RDS(ON) = 4.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：643.57 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.6 mΩ typ. (at VGS = 8.0 V) • Pb-free • Halogen-free

文件：130.039 Kbytes 页数：7 Pages

RENESAS

瑞萨