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CEU1012

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU1012L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CFA1012

PNPSILICONPLANARPOWERTRANSISTOR

PNPSILICONPLANARPOWERTRANSISTOR TO-220FPFullyIsolatedPlasticPackage ComplementaryCFC2562 HighCurrentSwitchingApplications

CDIL

Continental Device India Limited

CFP-1012TB

PIANOSWITCHES(FULLPITCH)

COPALCopal Electronics

尼得科科智博电子尼得科科智博电子(上海)有限公司

CHM1012LPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE120VoltsCURRENT10Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

CHM1012PAPT

N-ChannelEnhancementModeFieldEffectTransistor

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

CJ1012

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

CJ1012

SOT-523Plastic-EncapsulateMOSFETS

ZPSEMIZP Semiconductor

至尚臻品

CJ1012-G

MOSFET

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CJ1012-HF

MOSFET

Features -High-sideswitching. -Lowon-resistance. -Lowthreshold. -Fastswitchingspeed. -ESDprotected.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

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