P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.4A, RDS(ON) = 70mW @VGS = -10V. RDS(ON) = 108mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant.

文件：407.74 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 3.2 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：346.88 Kbytes 页数：2 Pages

CHENMKO

力勤

P-Channel 30-V(D-S) MOSFET

文件：1.21663 Mbytes 页数：5 Pages

JIANGSU

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SOT-23 Plastic-Encapsulate MOSFETS

文件：1.37649 Mbytes 页数：3 Pages

ZPSEMIZP Semiconductor

至尚臻品