P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 3.2 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：346.88 Kbytes 页数：2 Pages

CHENMKO

力勤

P-Channel Enhancement Mode Field Effect Transistor

Chenmko

力勤

Silicon NPN Transistor High Gain Power Amp

Features: • High Voltage • High DC Current Gain • High Collector Power Dissipation Capability

文件：20.03 Kbytes 页数：2 Pages

NTE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.54 Kbytes 页数：4 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.54 Kbytes 页数：4 Pages

RFMD

威讯联合