CES2307B

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.7A,RDS(ON)=60mW@VGS=-10V. RDS(ON)=82mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CES2307BB

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.4A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=108mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CHM2307PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT3.2Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CJ2307

P-Channel30-V(D-S)MOSFET

CJ2307

SOT-23Plastic-EncapsulateMOSFETS

CM2307

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CM2307

T-13/4Bi-PinBase(.125)

CRO2307A-LF

Voltage-ControlledOscillatorSurfaceMountModule

CRO2307A-LF

VOLTAGECONTROLLEDOSCILLATOR

CRO2307A-LF

Voltage-ControlledOscillatorSurfaceMountModule