CES2301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-2.8A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=150mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■SOT-23package. ■Leadfreeproductisacquired.

CES2301

P-Channel 20-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

CES2301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-2.8A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=150mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired.

CES2301

P Channel MOSFET;

CES2301A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-3A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CES2301_10

P-Channel Enhancement Mode Field Effect Transistor

CES2301A

P Channel MOSFET;