FDP8030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FST8030

80AmpRectifier20to45VoltsSchottkyBarrier

Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability

FYA-R8030ZX

LEDBARGRAPHDISPLAY

GSTU8030

NPN300,350,400V8AMPSWITCHING

IDTUS8030

LOWPOWERDUALSPDTHI-SPEEDUSB2.0(480MBPS)SWITCH

IDTUS8030

LOWPOWERDUALSPDTHI-SPEEDUSB2.0(480MBPS)SWITCH

Features •LowOncapacitance,3.7pF(typical) •LowOnresistance,6.5Ω(typical) •Lowpowerconsumption(1μAmaximum) –10μAmaximumICCToveranexpandedcontrol voltagerange(VIN=2.6V,VCC=4.3V) •Wide-3dBbandwidth,>850MHz •Bi-directionaloperation •8kVESDprotection •

ISCF8030

SiCN-ChannelMOSFET

FEATURES ·HighblockingvoltagewithlowOn-Resistance ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives

M8030A

M8030AMulti-ChannelBERT

M8030-KT

Versatileu-bloxM8GNSSchips

VersatileGNSSchipsinthreeproductgrades •Concurrentreceptionofupto3GNSS(GPS,Galileo,GLONASS,BeiDou) •Industryleading–167dBmnavigationsensitivity •Industrylowestcurrentconsumption •Superiorpositionaccuracyinurbancanyons •Securityandintegrityprotection •Sup

MA8030

Siliconplanartype

Siliconplanartype Forstabilizationofpowersupply ■Features •Extremelylownoisevoltagecausedfromthediode(2.4Vto39V,1/3to1/10ofourconventionalMAZ3000series) •Extremelygoodrisingperformance(inthelow-currentrange) •Easy-to-selecttheoptimumdiodebecause