CEP6405技术资料参数贸易商华瑞CET-MOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEP6405	文件：950.88 Kbytes Page：5 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -22A, RDS(ON) = 46mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 60mW @VGS = -4.5V. 文件：950.88 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEP6405	文件：300 bytes Page：1 Pages	P Channel MOSFET	CET 华瑞	CET
CEPF640	文件：507.74 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-220F full-pak for through hole. 文件：507.74 Kbytes 页数：5 Pages	CET 华瑞	CET
CEPF640	文件：1.94346 Mbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology 文件：1.94346 Mbytes 页数：5 Pages	DOINGTER 杜因特	DOINGTER
CEPF640	文件：627.43 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-220F full-pak for through hole. Lead free product is acquired. 文件：627.43 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS

更多CEP640供应商更新时间2026-3-13 10:19:00