N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 60A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：647.86 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：426.07 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

N-CHANNEL Logic Level POWER MOSFET

文件：277.99 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-CHANNEL Logic Level Power MOSFET

文件：478.93 Kbytes 页数：7 Pages

CHAMP

虹冠电子

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 60mΩ ID 12A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：198.15 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技