N-Channel Enhancement Mode Field Effect Transistor

FEATURES 80V, 152A, RDS(ON) = 3.6mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

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CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=160A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

无锡固电

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

仙童半导体

N-CHANNEL MOSFET

APPLICATIONS  High power DC/DC converters and switch mode power supplies  DC motor control  Automotive applications  Uninterruptible power supply FEATURES Low gate charge Low Rdson(typical 4.3mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS prod

文件：845.77 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

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