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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEP04N65	文件：364.49 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP04N65	文件：628 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP04N65A	文件：505.8 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
04N65	文件：1.97664 Mbytes Page：9 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
AM04N65	文件：827.56 Kbytes Page：10 Pages	MOSFET650V,4AN-CHANNEL FEATURE •RDS(ON),typ.=2.1Ω@VGS=10V •HighCurrentRating •LowerCapacitance •LowerTotalGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM04N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower	AITSEMIAiT Semiconductor Inc. AiT創瑞科技	AITSEMI
CEB04N65	文件：628 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB04N65A	文件：505.8 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED04N65	文件：472.74 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED04N65A	文件：479.27 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF04N65	文件：628 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF04N65A	文件：505.8 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU04N65	文件：472.74 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU04N65	文件：386.3 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,3.2A,RDS(ON)=2.8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU04N65	文件：1.28974 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEU04N65A	文件：479.27 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CJB04N65	文件：388.45 Kbytes Page：2 Pages	N-ChannelPowerMOSFET	ZPSEMI ZP Semiconductor	ZPSEMI
CJB04N65A	文件：539.25 Kbytes Page：2 Pages	Plastic-EncapsulateMOSFETS	ZPSEMI ZP Semiconductor	ZPSEMI
CJD04N65	文件：835.02 Kbytes Page：3 Pages	Plastic-EncapsulateMOSFETS	ZPSEMI ZP Semiconductor	ZPSEMI
CJD04N65	文件：1.06266 Mbytes Page：4 Pages	N-ChannelPowerMOSFET	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
CJD04N65A	文件：579.51 Kbytes Page：2 Pages	N-ChannelPowerMOSFET	ZPSEMI ZP Semiconductor	ZPSEMI

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百视威讯电子科技有限公司	CEP04N65		23+	N/A	49200	正品授权货源可靠	询价
深圳兆威电子有限公司	CEP04N65	VB	2019	TO-220	55000	绝对原装正品假一罚十!	询价
深圳市国宇半导体科技有限公司	CEP04N65	CET/華瑞	23+	TO-220	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	CEP04N65	CET	22+	TO-220	6000	十年配单,只做原装	询价
深圳市吉利鑫科技发展有限公司	CEP04N65	CET/華瑞	2022+	TO-220	79999		询价
易创佳业科技（深圳）有限公司	CEP04N65	C	23+	TO-220	6000	原装正品，支持实单	询价
深圳市创新迹电子有限公司	CEP04N65	C	22+	TO-220	25000	只做原装进口现货,专注配单	询价
深圳市惊羽科技有限公司	CEP04N65	CET	24+25+/26+27+	TO-220-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市九方航科技有限公司	CEP04N65	VBSEMI	19+	TO-220	29600	绝对原装现货,价格优势!	询价
深圳市勤思达科技有限公司	CEP04N6A	CET	23+	TO220/3	8000	全新原装现货,欢迎来电咨询	询价

更多CEP04N65供应商更新时间2024-5-7 15:50:00

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