CEP04N65A规格书贸易商华瑞CET-MOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEP04N65A	文件：505.8 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. 文件：505.8 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEP04N65A	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEU04N65	文件：386.3 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package. 文件：386.3 Kbytes 页数：4 Pages	CET 华瑞	CET
CEU04N65	文件：1.28974 Mbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology 文件：1.28974 Mbytes 页数：5 Pages	DOINGTER 杜因特	DOINGTER
CEU04N65	文件：472.74 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 3.2A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant. 文件：472.74 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS

更多CEP04N65A供应商更新时间2025-10-13 16:30:00