N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 4.1A, RDS(ON) = 45mW @VGS = 4.5V. RDS(ON) = 55mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

文件：667.9 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：565.69 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 4.1A, RDS(ON) = 45mW @VGS = 4.5V. RDS(ON) = 55mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

文件：516.1 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 2.2A, RDS(ON) = 45mW @VGS = 4.5V. RDS(ON) = 55mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-323 package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

文件：433.4 Kbytes 页数：5 Pages

CET-MOS

华瑞