P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -6A, RDS(ON) = 44mΩ @VGS = -4.5V. RDS(ON) = 65mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：410.99 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -6A, RDS(ON) = 44mW @VGS = -4.5V. RDS(ON) = 65mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：617.27 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, -5.3A, RDS(ON) = 45mW @VGS = -4.5V. RDS(ON) = 65mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：648.94 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：426.9 Kbytes 页数：4 Pages

CET

华瑞

P Channel MOSFET

CET

华瑞

P Channel MOSFET

CET

华瑞