N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 9.3A, RDS(ON) = 18mW @VGS = 4.5V. RDS(ON) = 24mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：461.72 Kbytes 页数：4 Pages

CET-MOS

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：446.1 Kbytes 页数：4 Pages

CET

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N-Channel Enhancement Mode Field Effect Transistor

文件：413.26 Kbytes 页数：4 Pages

CET

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N Channel MOSFET

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P Channel MOSFET

CET

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