Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：139.59 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

N Channel MOSFET

CET

华瑞

Analog Output Modules for Compact FieldPoint

文件：277.44 Kbytes 页数：5 Pages

NI

恩艾

MIXERS TRIPLE-BALANCED

文件：45.24 Kbytes 页数：2 Pages

SYNERGY

PNP Epitaxial Transistor

VOLTAGE 25 Volts CURRENT 5 Ampere FEATURE * Small flat package. (DPAK) * Low saturation voltage VCE(sat)=-0.3V(max.)(IC=-500mA) * High saturation current capability. CONSTRUCTION * PNP Switching Transistor

文件：73.85 Kbytes 页数：2 Pages

CHENMKO

力勤