CEM1210技术资料参数市场行情华瑞CET-MOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEM1210	文件：770.04 Kbytes Page：5 Pages	Single N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11.5A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V. 文件：770.04 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEM1210	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEM1210A	文件：466.88 Kbytes Page：5 Pages	Single N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11.7A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. 文件：466.88 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEM1210L	文件：444.78 Kbytes Page：5 Pages	Single N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13A, RDS(ON) = 9.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 13mW @VGS = 4.5V. 文件：444.78 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEM1210L	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET

更多CEM1210供应商更新时间2025-10-11 11:07:00