Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 11.7A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：466.88 Kbytes 页数：5 Pages

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Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 13A, RDS(ON) = 9.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 13mW @VGS = 4.5V.

文件：444.78 Kbytes 页数：5 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 62A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V.

文件：739.1 Kbytes 页数：5 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 53A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：500.61 Kbytes 页数：5 Pages

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华瑞