CEF02N65A资料datasheet下载库存现货华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEF02N65A	文件：539.32 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：539.32 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEF02N65A	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEF02N65D	文件：350.41 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 文件：350.41 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEF02N65G	文件：599.68 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 文件：599.68 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEK02N65A	文件：502.26 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.35A, RDS(ON) = 10.5 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TO-92(Bulk) & TO-92(Ammopack) package. RoHS compliant. 文件：502.26 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CEF02N65A供应商更新时间2025-10-10 11:01:00