CEEF02N65G中文资料下载库存现货华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEEF02N65G	文件：557.84 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 2.0A, RDS(ON) = 5.0W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126F package. Lead-free plating ; RoHS compliant. 文件：557.84 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEEF02N65G	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEF02N65A	文件：539.32 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：539.32 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEF02N65D	文件：350.41 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 文件：350.41 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEF02N65G	文件：599.68 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 文件：599.68 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS

更多CEEF02N65G供应商更新时间2025-10-9 15:01:00