N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-126 package.

文件：461.29 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1.3A, RDS(ON) = 8.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126 package. Lead-free plating ; RoHS compliant.

文件：721.46 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 2.0A, RDS(ON) = 5.0W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126 package. Lead-free plating ; RoHS compliant.

文件：723.02 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-126 package.

文件：462.09 Kbytes 页数：4 Pages

CET

华瑞

金手指连接器

Amphenol

安费诺

金手指连接器

Amphenol

安费诺

N Channel MOSFET

CET

华瑞

包装：散装 类别：连接器，互连器件 边缘板连接器 描述：CONN PCI EXP FMALE 230POS 0.039

AMPHENOLCS

安费诺

包装：散装 类别：连接器，互连器件 边缘板连接器 描述：CONN PCI EXP FMALE 230POS 0.039

AMPHENOLCS

安费诺

包装：管件 类别：连接器，互连器件 边缘板连接器 描述：CONN PCI EXP FMALE 230POS 0.039

AMPHENOLCS

安费诺