首页 >CEDM7002AETR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,0.3A,RDS(ON)=6Ω@VGS=10V. RDS(ON)=6Ω@VGS=5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,0.25A,RDS(ON)=3Ω@VGS=10V. RDS(ON)=4Ω@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23-Tpackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,0.25A,RDS(ON)=3W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. Leadfreeproductisacquired. RDS(ON)=4W@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,0.2A,RDS(ON)=3W@VGS=10V. RDS(ON)=4W@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. ESDprotectedupto2KV RoHScompliant. SOT-23-Tpackage. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,0.28A,RDS(ON)=2Ω@VGS=10V. RDS(ON)=3Ω@VGS=5V. ■HighdensecelldesignforlowRDS(ON). ■Ruggedandreliable. ■SOT-23package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
Minimumrealestaterequired | IRONWOOD Ironwood Electronics. | IRONWOOD | ||
ScalableVGAtoNTSC/PALEncoder | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
ScalableVGAtoNTSC/PALEncoder | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Automatedprobemanufacturingenableslowcostandshortleadtime | IRONWOOD Ironwood Electronics. | IRONWOOD | ||
SURFACEMOUNTPICOminiDUALN-CHANNELENHANCEMENT-MODESILICONMOSFET | CentralCentral Semiconductor Corp 美国中央半导体 | Central |
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