首页 >CED65A3>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,45A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=18mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE25VoltsCURRENT38Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
VCE=650V,IC=15ATrenchFieldStopIGBT | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
TrenchFieldStopIGBTswithFastRecoveryDiode | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
TrenchFieldStopIGBTswithFastRecoveryDiode | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
TrenchFieldStopIGBTswithFastRecoveryDiode | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
TrenchFieldStopIGBTswithFastRecoveryDiode | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
TrenchFieldStopIGBTswithFastRecoveryDiode | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
TrenchFieldStopIGBTswithFastRecoveryDiode | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
TrenchFieldStopIGBTswithFastRecoveryDiode | SankenSanken electric 三垦三垦电气株式会社 | Sanken |
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