CEU6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,50A,RDS(ON)=8.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CEU6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,50A,RDS(ON)=8.7mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

ISUM6086

UltrafastDiode

DESCRIPTION ·Lowreversecurrent ·Softrecovery ·ReducesEMIfiltercomponent APPLICATIONS ·UninterruptiblePowerSupply(UPS)inverters ·DC-DCconverters ·Switchmodepowersupplies(SMPS)

NTE6086

SiliconDualSchottkyRectifier

Description: TheNTE6086isasilicondualpowerrectifierinaTO220typepackagedesignedusingtheSchottky Barrierprinciplewithaplatinumbarriermetal. Features: 20AmpsTotal(10AmpsPreDiodeLeg) GuardingforStressProtection LowForwardVoltage +150°COperating

PE6086

0.5WattRFLoadwithChainUpto40GHzwith2.92mmMalePassivatedStainlessSteel

PE6086

50Ohm0.5WattsPrecision2.92mmMaleRFLoadWithChainUpTo40GHz

R6086YNZ

Nch600V40mohm(typ.)PowerMOSFET

Features 1)Lowon-resistance 2)Fastswitching 3)Drivecircuitscanbesimple 4)Pb-freeplating;RoHScompliant 5)Halogenfreemoldcompound Application Switchingapplications

RJH6086BDPK

600V-45A-IGBTHighSpeedPowerSwitching

Features •Ultrahighspeedswitching tf=36nstyp.(atIC=30A,VCC=300V,VGE=15V,Rg=5Ω,InductiveLoad) •Lowon-statevoltage •Fastrecoverydiode

SG-BGA-6086

Ballguidepreventsovercompressionofelastomer

SS6086

1.5ALowDropoutPositiveRegulator