CED6036L规格书供应价格华瑞CET-MOS-114ic电子网

首页 >CED6036L>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
CED6036L	文件：587.77 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 118A, RDS(ON) = 4.0mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 5.5mW @VGS = 4.5V. 文件：587.77 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CED6036L	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEP6036	文件：427.23 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package. 文件：427.23 Kbytes 页数：4 Pages	CET 华瑞	CET
CEP6036	文件：1.10074 Mbytes Page：4 Pages	N-Channel MOSFET uses advanced trench technology 文件：1.10074 Mbytes 页数：4 Pages	DOINGTER 杜因特	DOINGTER
CEP6036L	文件：695.63 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 144A, RDS(ON) = 4.0mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 5.5mW @VGS = 4.5V. 文件：695.63 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CED6036L供应商更新时间2025-10-6 16:50:00