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CED3062

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 77A , RDS(ON) = 6.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 8.5mW @VGS = 4.5V. RoHS compliant.

文件:578.41 Kbytes 页数:5 Pages

CET-MOS

华瑞

CED3062

N Channel MOSFET

CET

华瑞

CEM3062

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 14A, RDS(ON) = 7.8mW @VGS = 10V. RDS(ON) = 11.5mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件:772.26 Kbytes 页数:5 Pages

CET-MOS

华瑞

CEP3062

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 105A ,RDS(ON) = 6.0mW @VGS = 10V. RDS(ON) = 7.5mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

文件:594.18 Kbytes 页数:5 Pages

CET-MOS

华瑞

CEU3062

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 77A , RDS(ON) = 6.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 8.5mW @VGS = 4.5V. RoHS compliant.

文件:578.41 Kbytes 页数:5 Pages

CET-MOS

华瑞

技术参数

  • BVDSS(V):

    30

  • Rds(on)mΩ@10V:

    6.5

  • Rds(on)mΩ@4.5V:

    8.5

  • ID(A):

    77

  • Qg(nC)@4.5V(typ):

    20

  • RθJC(℃/W):

    2

  • Pd(W):

    75

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
SR
23+
TO-251
7000
原装正品,假一罚十
询价
NEXPERIA/安世
23+
69820
终端可以免费供样,支持BOM配单!
询价
C
TO-251
22+
6000
十年配单,只做原装
询价
CET
22+
TO-251
25000
只有原装绝对原装,支持BOM配单!
询价
CET/華瑞
20+
TO-251
2200
现货很近!原厂很远!只做原装
询价
CET
25+
TO-251
2200
原装正品,假一罚十!
询价
恩XP
24+
SSOP16
6618
公司现货库存,支持实单
询价
CET/華瑞
23+
TO-251 TO-252
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CET
18+
TO-252
41200
原装正品,现货特价
询价
CET
25+
TO-251
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多CED3062供应商 更新时间2025-11-22 15:36:00