N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 77A , RDS(ON) = 6.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 8.5mW @VGS = 4.5V. RoHS compliant.

文件：578.41 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 14A, RDS(ON) = 7.8mW @VGS = 10V. RDS(ON) = 11.5mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：772.26 Kbytes 页数：5 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 105A ,RDS(ON) = 6.0mW @VGS = 10V. RDS(ON) = 7.5mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

文件：594.18 Kbytes 页数：5 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 77A , RDS(ON) = 6.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 8.5mW @VGS = 4.5V. RoHS compliant.

文件：578.41 Kbytes 页数：5 Pages

CET-MOS

华瑞