P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -22A, RDS(ON) = 46mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 60mW @VGS = -4.5V.

文件：950.88 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：402.54 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-220F full-pak for through hole.

文件：507.74 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-220F full-pak for through hole. Lead free product is acquired.

文件：627.43 Kbytes 页数：4 Pages

CET-MOS

华瑞