N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Lead free product is acquired. ● TO-220 & TO-263 package.

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CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：434.85 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

COM Express Type 6 Compact Module with Intel® Atom® x5 and x7 Processor

Features ● Intel® Atom® x5 and x7 processors (Apollo Lake) ● 2 DDR3L-1600 SO-DIMM for up to 8GB of memory ● Max. up to 4 lanes of PCI Express ● 2 SATA-600 ● 4 USB 3.0 and 8 USB 2.0 ● AXView 2.0 intelligent remote management software ● TPM 1.2 supported (optional)

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AXIOMTEK

艾讯科技

2. 54MM(.100) RIGHT ANGLE BOARD MOUNT PN HEADER

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CVILUX

瀚荃

White translucent high impact UV stabilized acrylic lens

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LUMINIS