包装：袋 类别：工业自动化与控制 气动，液压 - 配件 描述：DD52R (INCH SIZES), MECHANICAL P

Elesa USA Corporation

包装：袋 类别：工业自动化与控制 气动，液压 - 配件 描述：DD52R (INCH SIZES), MECHANICAL P

Elesa USA Corporation

包装：袋 类别：工业自动化与控制 气动，液压 - 配件 描述：DD52R (INCH SIZES), MECHANICAL P

Elesa USA Corporation

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 20V , 26A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m @V Ω GS=2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.

文件：59.68 Kbytes 页数：5 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40mΩ @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TSSOP-8 for Surface Mount Package.

文件：56.14 Kbytes 页数：5 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

Feature ● 20V/, 6A, RDS(ON) = 30mΩ(MAX) @VGS = 4.5V. RDS(ON) = 40mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package.

文件：505.03 Kbytes 页数：5 Pages

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