POWER MOSFET

Chipower

芯力微电子

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -2.7A, RDS(ON) = 110mW @VGS = -4.5V. RDS(ON) = 160mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. Lead-free plating ; RoHS compliant.

文件：550.11 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -3A, RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant.

文件：926.25 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -2.8A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ SOT-23 package. ■ Lead free product is acquired.

文件：109.38 Kbytes 页数：4 Pages

CET

华瑞