MIL-PRF-55681/Chips

文件：60.39 Kbytes 页数：4 Pages

AVX

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., Input Signal PA

文件：543.07 Kbytes 页数：17 Pages

恩XP

MIL-PRF-55681/Chips

文件：281.93 Kbytes 页数：4 Pages

KSS

京瓷

RF Power LDMOS Transistors

文件：437.43 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Surface Mount Multilayer Ceramic Chip Capacitors MIL Qualified, Type CDR

Military qualified products\nFederal stock control number, CAGE CODE 2770A\nHigh reliability tested per MIL-PRF-55681;

Vishay

威世

Surface Mount Multilayer Ceramic Chip Capacitors MIL Qualified, Type CDR

Military qualified products\nFederal stock control number, CAGE CODE 2770A\nHigh reliability tested per MIL-PRF-55681;

Vishay

威世

Surface Mount Multilayer Ceramic Chip Capacitors MIL Qualified, Type CDR

Military qualified products\nFederal stock control number, CAGE CODE 2770A\nHigh reliability tested per MIL-PRF-55681;

Vishay

威世

包装：卷带（TR） 类别：电容器 陶瓷电容器 描述：CAP CER SMP MLC HI-REL

KSS

京瓷

包装：卷带（TR） 类别：电容器 陶瓷电容器 描述：CAP CER SMP MLC HI-REL

KSS

京瓷

包装：卷带（TR） 类别：电容器 陶瓷电容器 描述：CAP CER SMP MLC HI-REL

KSS

京瓷