RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., Input Signal PA

文件：543.07 Kbytes 页数：17 Pages

恩XP

RF Power LDMOS Transistors

文件：437.43 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

包装：卷带（TR） 类别：电容器 陶瓷电容器 描述：CAP CER SMP MLC HI-REL

KSS

京瓷

包装：卷带（TR） 类别：电容器 陶瓷电容器 描述：CAP CER SMP MLC HI-REL

KSS

京瓷

Surface Mount Multilayer Ceramic Chip Capacitors MIL Qualified, Type CDR

Military qualified products\nFederal stock control number, CAGE CODE 2770A\nHigh reliability tested per MIL-PRF-55681;

Vishay

威世

Surface Mount Multilayer Ceramic Chip Capacitors MIL Qualified, Type CDR

Military qualified products\nFederal stock control number, CAGE CODE 2770A\nHigh reliability tested per MIL-PRF-55681;

Vishay

威世

Package：1812（4532 公制）；包装：卷带（TR） 类别：电容器 陶瓷电容器 描述：CAP CER 0.1UF 50V BX 1812

VISHAYVishay Siliconix

威世威世科技公司