CEU3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU3100

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=55A,RDS(ON)

CEU3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CP3100SC

SMBPlastic-EncapsulateDiodes

CPP-A3100

JETSTARINKJETARTWORKFILMSTANDARDANDPREMIUMJETSTARINKJETARTWORKFILMSTANDARDANDPREMIUM

1.Prepareartworkforoutput.Prepareartworkforoutput.Prepareartworkforoutput. Thequalityofyourdigitalartworkwilldeterminethequalityofyourpositive. Theartworkshouldhavesmoothlinesandedgesandbeofadequate resolution.Aminimumof720dpiisrecommended(1440dpiis

CR3100SA

TheCRrangeofprotectorsarebasedontheproventechnologyoftheT10thyristorproduct

CR3100SA

Thyristors(SiBODBreakoverDevices)

[CRYDOM] GetTVSInsuranceFrom ThePeopleWhoKnow There’stoomuchridingonover-voltagesurgeprotectiontotakechances.That’swhymoreandmorepeopleareturningtoCrydom. Crydom’sSiBODSeriesEquals “CrowBar”Protection Toprotectsensitivetelecommunicationscircuitry,CrydomTh

CR3100SB

TheCRrangeofprotectorsarebasedontheproventechnologyoftheT10thyristorproduct

CR3100SB

Thyristors(SiBODBreakoverDevices)

[CRYDOM] GetTVSInsuranceFrom ThePeopleWhoKnow There’stoomuchridingonover-voltagesurgeprotectiontotakechances.That’swhymoreandmorepeopleareturningtoCrydom. Crydom’sSiBODSeriesEquals “CrowBar”Protection Toprotectsensitivetelecommunicationscircuitry,CrydomTh

CR3100SC

TheCRrangeofprotectorsarebasedontheproventechnologyoftheT10thyristorproduct