QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE

FEATURES · Controlled Baseline – One Assembly/Test Site, One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Inputs Are TTL-Voltage Compa

文件：372.08 Kbytes 页数：12 Pages

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：642.47 Kbytes 页数：17 Pages

TI

德州仪器

Quad 2-Input Exclusive-OR Gate

文件：34.21 Kbytes 页数：5 Pages

TI

德州仪器

丝印：CD74ACT86E；Package：PDIP；QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：642.47 Kbytes 页数：17 Pages

TI

德州仪器

丝印：CD74ACT86E；Package：PDIP；QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：642.47 Kbytes 页数：17 Pages

TI

德州仪器

具有 TTL 兼容型 CMOS 输入的 4 通道、2 输入、4.5V 至 5.5V XOR（异或）门

The ’ACT86 devices are quadruple 2-input exclusive-OR gates. These devices perform the Boolean function Y = AB or Y = A\\B + AB\\ in positive logic.\n\n A common application is as a true/complement element. If one of the inputs is low, the other input is reproduced in true form at the output. If one • Inputs Are TTL-Voltage Compatible\n• Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption\n• Balanced Propagation Delays\n• ±24-mA Output Drive Current \n• Fanout to 15 F Devices\n \n• SCR-Latchup-Resistant CMOS Process and Circuit Design\n• Exceeds 2-kV ESD Protection Per M;

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE

FEATURES · Controlled Baseline – One Assembly/Test Site, One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Inputs Are TTL-Voltage Compa

文件：372.08 Kbytes 页数：12 Pages

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：642.47 Kbytes 页数：17 Pages

TI

德州仪器

丝印：ACT86M；Package：SOIC；QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：642.47 Kbytes 页数：17 Pages

TI

德州仪器

丝印：ACT86M；Package：SOIC；QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：642.47 Kbytes 页数：17 Pages

TI

德州仪器