丝印：CD74ACT86E；Package：PDIP；QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：642.47 Kbytes 页数：17 Pages

TI

德州仪器

丝印：CD74ACT86E；Package：PDIP；QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：642.47 Kbytes 页数：17 Pages

TI

德州仪器

丝印：CD74ACT86E；Package：PDIP；QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：642.47 Kbytes 页数：17 Pages

TI

德州仪器

丝印：CD74ACT86E；Package：PDIP；QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：642.47 Kbytes 页数：17 Pages

TI

德州仪器

Quad 2-Input Exclusive-OR Gate

文件：34.21 Kbytes 页数：5 Pages

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES

文件：872.35 Kbytes 页数：13 Pages

TI

德州仪器